t4 - lds - 0226, rev . 2 (1 20659 ) ?2011 - 2012 microsemi corporation page 1 of 6 05012GOF-050 available 50 amp silicon controlled rectifier description this scr (silicon controlled rectifier) has superior c ircuit - commutated turn - off time ( tq) of <50 s. to - 208ac (to - 65) package important: for the latest information, visit our website http://www.microsemi.com . features ? compact to - 208ac package. ? 1200 amperes max surge current. ? dv/dt = 200 v/ sec . ? rohs compliant version available . applications / benefits ? economical for medium power applications. maximum ratings msc C law rence 6 lake street, lawrence, ma 01841 tel: 1- 800 - 446 - 1158 or (978) 620 - 2600 fax: (9 78) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website : www.microsemi.com parameters/test conditions symbol value unit junction temp erature t j - 65 to 125 o c storage temperature t stg - 65 to 150 o c thermal resistance junction - to - case r ? jc 0.35 o c /w thermal resis tance case - to -sink r ? cs 0.20 o c /w maximum leakage current @ t j = 125 o c & 1200 v i drm 6 ma maximum reverse leakage @ t j = 125 o c & 1200 v i rrm 6 ma downloaded from: http:///
t4 - lds - 0226, rev . 2 (1 20659 ) ?2011 - 2012 microsemi corporation page 2 of 6 05012GOF-050 mechanical and packaging ? case: metal to - 65 . ? terminals: long = cathode, short = gate , stud = anode . ? marking: scr symbol, msc (microsemi corporation), p art #, d/c ( d ate c ode) . ? polarity: see scr symbol on package. ? weight: 0.56 ounces (16 grams) typical . ? mounting torque: 25 C 30 inch pounds . ? see p ackage d imensio ns on last page. part nomenclature 050 12 g o f - 050 (e3) 50 a max average on - state current 1200 v forward & reverse repetitive blocking voltage d v/dt 200 v/ sec rohs compliance e3 = rohs compliant blank = non - rohs compliant fast tq rating tq <50 sec @ 125 o c to - 208ac (to - 65) package type symbols & definitions symbol definition dv/dt critical rate of rise of off - state voltage . (any higher will cause false triggering.) i tm on - state current: the maximum (peak) total valu e. tq turn off time. t c case temperature: the temperature measured at the case. t j junction temperature: the temperature of the semiconductor junction. t p pulse time: the time interval between a reference point on a leading edge of a pulse waveform and a referen ce point on the trailing edge of the same waveform. v drm repetitive peak off - state voltage: the maximum (peak) total value of repetitive peak off - state voltage . v r reverse voltage: the reverse voltage dc value, no alternating component. downloaded from: http:///
t4 - lds - 0226, rev . 2 (1 20659 ) ?2011 - 2012 microsemi corporation page 3 of 6 05012GOF-050 electrical characteristics description condition rating notes max. rms on - state current i t(rms) 80 a t c = 94 c max. a verage on - state current i t(av) 50 a t c = 94 c max. peak on - state voltage v tm 2.3 v i tm = 14 0 a(peak) max. holding current i h 200 ma max. peak one cycle surge current i tsm 1200 a t c = 94 c 60 hz max. i 2 t capability for fusing (note 1) i 2 t 6000 a 2 s t = 8.3 ms notes: 1. above this rating terminals will melt. switching: description condition rating notes critical role of rise of on - state current (note 2) di/dt 200 a/ s t j = 125 o c typical delay time (note 2) td 3.0 s typical circuit commuted turn - off time (note 3) tq 50 s t j = 125 o c notes: 2 . i tm = 50 a, v d = v drm . gt = 12 v open circuit, 20 ohm C 0.1 sec, rise time. 3 . i tm = 50 a, di/dt = 5 a/ sec, v r during turn - off interval = 50 v min, reapplied dv/dt = 20 v/ sec, linear to rated v drm , v gt = 0 v . triggering: description condition rating notes max. gate voltage to trigger v gt 3.0 v max. non - triggerin g gate voltage v gd 0.25 v t j = 125 o c max. gate current to trigger i gt 100 ma max. peak gate power p gm 10 w average gate power p g(av) 1.0 w tp = 10 s max. peak gate current i gm 3.0 a max. peak gate voltage (forward) v gm 20 v max. peak gate vo ltage (reverse) v gm 10 v blocking: description condition rating notes max. leakage current i drm 6 ma t j = 125 o c & 1200 v max. reverse leakage i rrm 6 ma t j = 125 o c & 1200 v critical rate of rise of off - state voltage a s above f alse triggering of dev ice dv/dt 200 v/ s t j = 125 o c downloaded from: http:///
t4 - lds - 0226, rev . 2 (1 20659 ) ?2011 - 2012 microsemi corporation page 4 of 6 05012GOF-050 graphs instantaneous on - state voltage C volts figure 1 typical forward on - state characteristics average on - state voltage C amperes average on - state current - amperes figure 2 figure 3 forward current derating maximum power dissipation instantaneous on - state current - amperes maximum allowable case temperature - c maximum power dissipation - watts downloaded from: http:///
t4 - lds - 0226, rev . 2 (1 20659 ) ?2011 - 2012 microsemi corporation page 5 of 6 05012GOF-050 graphs (continued) time in seconds figure 4 transient thermal impedance number of cycles figure 5 maximum non - repetitive surge current j unction to case thermal impedance - c/watts peak on - state current C amperes downloaded from: http:///
t4 - lds - 0226, rev . 2 (1 20659 ) ?2011 - 2012 microsemi corporation page 6 of 6 05012GOF-050 package dimensions notes: 1. ? - 28 unf - 3a . 2. full thread within 2 ? threads . dim. inches millimeter minimum maximum minimum maximum note s a --- --- --- --- 1 b .677 .685 17.20 17.40 c --- .770 --- 19.56 d 1.200 1.250 30.48 31.75 e .427 .447 10.84 11.35 f .115 .155 2.92 3.94 g --- .515 --- 13.08 h .220 .249 5.58 6.32 2 j .200 .300 5.08 7.62 k .120 --- 3.05 --- m --- .667 --- 16.94 dia. n .065 .085 1.65 2.15 p .145 .155 3.68 3.93 dia. r .055 .065 1.40 1.65 dia. s .025 .030 .64 .76 downloaded from: http:///
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